Patent application number | Description | Published |
20090018485 | CONTROL OF MICROORGANISMS IN THE SINO-NASAL TRACT - Disclosed are methods and apparatus for safe, simple and effective broad-spectrum treatments of chronic rhinosinusitis and other common and less common infections of the sino-nasal tract which may implicate not only a wide range of bacterial species but also fungi and viruses. Electromagnetic radiative energy including visible, and optionally, thermal RF, microwave or other longer wavelengths, is applied to target internal surfaces of the sino-nasal tract to destroy or incapacitate superficial microorganisms without the use of antibiotics. The treatment can be controlled to permit regrowth of healthy microflora. A handheld energy applicator has a light output head receivable into, or engageable with, the treatment subject's nostril which may be provided with extensions to reach the sinuses. Useful embodiments of the invention include pretreatment of target sino-nasal surfaces with a photosensitizing agent such as an oxidizing agent or a complementary stain. For example methylene blue can be used with orange or red light. The combination treatment of photosensitizer and application of visual wavelength energy provides a flexible treatment regimen which enables low concentrations of stains to be employed, minimizing aesthetic problems. | 01-15-2009 |
20100076526 | CONTROL OF HALITOSIS-GENERATING AND OTHER MICROORGANISMS IN THE NON-DENTAL UPPER RESPIRATORY TRACT - Disclosed are safe, simple and effective broad-spectrum treatments for halitosis and other microbial infections of the nondental upper respiratory tract useful to treat bacterial and other microorganism species, including anaerobic bacteria. Electromagnetic radiative energy including visible, and optionally, thermal, RF and/or microwave wavelengths, is topically applied to internal surfaces of the upper respiratory tract to destroy or incapacitate superficial microorganisms without the use of antibiotics. One useful apparatus is a handheld energy applicator having a light output head suitable for treating the back of the tongue and the tonsils and which may be interchangeably provided with extensions to reach the sinuses. The energy applicator can be supported and guided by a mounting device held between the subject's teeth, if desired. Useful embodiments of the invention include preparative treatment of the target surfaces with a photosensitizing agent such as an oxidizing agent or a complementary stain. Optionally a pre-treatment procedure may be employed to remove detritus and microfloral overgrowths that may mask more deeply resident target microorganisms. Novel treatments include treatment of halitosis by destruction of bacterial species associated with halitosis, such as | 03-25-2010 |
Patent application number | Description | Published |
20080245559 | Variable interconnect geometry for electronic packages and fabrication methods - Disclosed is a variable interconnect geometry formed on a substrate that allows for increased electrical performance of the interconnects without compromising mechanical reliability. The compliance of the interconnects varies from the center of the substrate to edges of the substrate. The variation in compliance can either be step-wise or continuous. Exemplary low-compliance interconnects include columnar interconnects and exemplary high-compliance interconnects include helix interconnects. A cost-effective implementation using batch fabrication of the interconnects at a wafer level through sequential lithography and electroplating processes may be employed. | 10-09-2008 |
20080305653 | Complant off-chip interconnects for use in electronic packages and fabrication methods - Disclosed are apparatus comprising single-path and multiple-path compliant interconnects that are coupled between electrical contacts and that allow for increased electrical performance without compromising mechanical reliability. Exemplary apparatus comprises a conductive vertical anchor coupled at a first end to an electrical contact; and one or more conductive arcuate beams coupled at a first end to a second end of the vertical anchor, and coupled at a second end to a second electrical contact. One electrical contact comprises a die contact pad and the other electrical contact comprises a substrate contact pad. Alternatively, one electrical contact comprises a substrate contact pad and the other electrical contact comprises a printed circuit board contact pad. Also, one electrical contact comprises a die contact pad and the other electrical contact comprises a printed circuit board contact pad. Methods of fabricating the apparatus are also disclosed. | 12-11-2008 |
20090188705 | Construction of Reliable Stacked Via in Electronic Substrates - Vertical Stiffness Control Method - A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a platted through hole landing supporting the plurality of stacked vias. The platted through hole landing includes a compliant center zone; and spring-like stiffness-reducing connectors for connecting the compliant center zone of the platted through hole landing. | 07-30-2009 |
20090189289 | EMBEDDED CONSTRAINER DISCS FOR RELIABLE STACKED VIAS IN ELECTRONIC SUBSTRATES - A substrate via structure for stacked vias includes: a plurality of stacked vias, wherein each via is disposed on a landing; and at least one constrainer disc surrounding at least one via, for constraining in-plane deformation of the substrate via structure. The constrainer disc is embedded such that the constrainer disc is disposed between two layers of resin. The constrainer discs may be made of copper. The constrainer disc may be circular or square-shaped. Preferably there is a dielectric gap between the constrainer disc and the via. | 07-30-2009 |
20090189290 | CLUSTERED STACKED VIAS FOR RELIABLE ELECTRONIC SUBSTRATES - A substrate via structure for stacked vias in a substrate/chip assembly includes: a center via stack and a plurality of stacked vias clustered around the center via stack. In this structure, the center via and the surrounding vias are made of copper. Some of the surrounding vias may be non-functional vias and these may be of a different height than the functional vias. | 07-30-2009 |
20120192418 | Compliant Off-Chip Interconnects for Use in Electronic Packages and Fabrication Methods - Disclosed are apparatus comprising single-path and multiple-path compliant interconnects that are coupled between electrical contacts and that allow for increased electrical performance without compromising mechanical reliability. Exemplary apparatus comprises a conductive vertical anchor coupled at a first end to an electrical contact; and one or more conductive arcuate beams coupled at a first end to a second end of the vertical anchor, and coupled at a second end to a second electrical contact. One electrical contact comprises a die contact pad and the other electrical contact comprises a substrate contact pad. Alternatively, one electrical contact comprises a substrate contact pad and the other electrical contact comprises a printed circuit board contact pad. Also, one electrical contact comprises a die contact pad and the other electrical contact comprises a printed circuit board contact pad. Methods of fabricating the apparatus are also disclosed. | 08-02-2012 |
20120267158 | CONSTRUCTION OF RELIABLE STACKED VIA IN ELECTRONIC SUBSTRATES - VERTICAL STIFFNESS CONTROL METHOD - A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a platted through hole landing supporting the plurality of stacked vias. The platted through hole landing includes an etched pattern. | 10-25-2012 |
20120279061 | CLUSTERED STACKED VIAS FOR RELIABLE ELECTRONIC SUBSTRATES - A method of fabricating a substrate via structure in a substrate/chip assembly includes steps of: disposing a center via stack for electrical interconnects in the substrate/chip assembly; and providing a plurality of stacked vias surrounding the center via stack. The plurality of stacked vias encircle the center via stack, resulting in no isolated via stacks on the structure. The plurality of stacked vias have both functional and non-functional vias. | 11-08-2012 |
20120299195 | CONSTRUCTION OF RELIABLE STACKED VIA IN ELECTRONIC SUBSTRATES - VERTICAL STIFFNESS CONTROL METHOD - A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a platted through hole landing with a thickness of substantially 3 μm. The platted through hole landing includes an etched pattern and a copper top surface. | 11-29-2012 |
Patent application number | Description | Published |
20110306717 | Process For Forming Polymer Blends - A method for forming a polymer blend, the method comprising charging to a reactive extruder a first polymer and a second polymer to form an initial blend, where the first polymer is a propylene-based elastomer including up to 35% by weight ethylene-derived units and a heat of fusion, as determined according to DSC procedures according to ASTM E-793, of less than 80 J/g and a melt temperature of less than 110° C., where the second polymer is a propylene-based polymer having a melt temperature in excess of 110° C. and a heat of fusion in excess of 80 J/g. | 12-15-2011 |
20120116338 | Polypropylene Nonwoven Fibers And Fabrics And Methods For Making Same - Nonwoven fabrics of fibers comprising one or more primary polypropylenes having a molecular weight distribution of less than 3.5 and a melt flow rate within the range from 5 to 500 dg/min, the fibers having an average diameter of less than 20 μm, or a denier (g/9000 m) of less than 2.0, thus forming propylene-based fabrics. The primary polypropylene is preferably a reactor grade polymer made using a single-site catalyst. In certain embodiments, the propylene-based fabrics disclosed herein have a MD Tensile Strength (WSP 110.4 (05)) of greater than 20 N/5 cm when calendered at a temperature within the range from 110 to 15O° C. Also in certain embodiments, the fabrics have a CD Tensile Strength (WSP 110.4 (05)) of greater than 10 N/5 cm when calendered at a temperature within the range from 110 to 15O° C. The fabrics are preferably meltspun, and in a particular embodiment are spunbond fabrics. | 05-10-2012 |
20130059979 | Process for Forming Polymer Blends - A method for forming a fiber, the method comprising charging to a reactive extruder a first polymer and a second polymer to form an initial blend, where the first polymer is a propylene-based elastomer including up to 35% by weight ethylene-derived units and a heat of fusion, as determined according to DSC procedures according to ASTM E-793, of less than 80 J/g and a melt temperature of less than 110° C., where the second polymer is a propylene-based polymer having a melt temperature in excess of 110° C. and a heat of fusion in excess of 80 J/g, and introducing the reactive blend to a spinneret to form a fiber or extruding the reacted blend through a plurality of die capillaries to form molten threads or filaments which are attenuated in a gas stream to form meltblown fibers. | 03-07-2013 |
20140378017 | Method for Making Polypropylene Nonwoven Fibers and Fabrics - A method for making nonwoven fabrics of fibers comprising one or more primary polypropylenes having a molecular weight distribution of less than 3.5 and a melt flow rate within the range from 5 to 500 dg/min, the fibers having an average diameter of less than 20 μm, or a denier (g/9000 m) of less than 2.0, thus forming propylene-based fabrics. The propylene-based fabrics may have a MD Tensile Strength (WSP 110.4 (05)) of greater than 20 N/5 cm when calendered at a temperature within the range from 110 to 150° C. Also, the fabrics may have a CD Tensile Strength (WSP 110.4 (05)) of greater than 10 N/5 cm when calendered at a temperature within the range from 110 to 150° C. The fabrics are preferably meltspun, and in particular may be spunbond fabrics. | 12-25-2014 |
Patent application number | Description | Published |
20090124153 | Fibers and Non-Wovens Prepared with Propylene-Based Elastomers - A non-woven fabric made from a composition prepared by combining a first propylene-based polymer blend, where the first polymer blend is prepared by combining a propylene-based elastomer with a propylene-based thermoplastic resin and where the first blend has an MFR (ASTM D-1238 2.16 kg @ (230° C.) equal to or less than 50 dg/min, with a second propylene-based polymer blend, where the second polymer blend is prepared by combining a propylene-based elastomer with a propylene-based thermoplastic resin and where said second blend has an MFR (ASTM D-1238 2.16 kg @ 230° C.) greater than 50 dg/min, where the propylene-based elastomers comprise from about 5% to 35% by weight units derived from ethylene or non-propylene alpha-olefin and have a heat of fusion, as determined by DSC, of less than 80 J/g, and where the propylene-based thermoplastic resins have a heat of fusion, as determined by DSC, equal to or greater than 80 J/g. | 05-14-2009 |
20090124154 | Fibers and Non-Wovens Prepared with Propylene-Based Elastomers - Nonwoven fabrics and methods for making the same are described, wherein the fabrics comprise two or more propylene-based elastomers in combination with one or more propylene-based thermoplastic polymers. Specifically, the first propylene-based elastomer comprises at least 7% by weight ethylene or non-propylene alpha-olefin units, the second propylene-based elastomer comprises less than 7% by weight ethylene or non-propylene alpha-olefin units, the first and second propylene-based elastomers each have a heat of fusion less than 80 J/g, and the propylene-based thermoplastic polymer has a heat of fusion greater than 80 J/g. | 05-14-2009 |
20110092658 | Late Transition Metal Catalysts for Olefin Oligomerizations - A series of novel late transition metal catalysts for olefin oligomerization have been invented. The catalysts demonstrate high activity and selectivity for linear α-olefins. | 04-21-2011 |